IPP60R750E6
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
IPP60R750E6 datasheet
-
МаркировкаIPP60R750E6
-
ПроизводительInfineon Technologies
-
ОписаниеInfineon Technologies IPP60R750E6 Continuous Drain Current: 5.7 A Current - Continuous Drain (id) @ 25?° C: 5.7A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 17.2nC @ 10V Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 373pF @ 100V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: * Package / Case: * Power - Max: 48W Power Dissipation: 48 W Rds On (max) @ Id, Vgs: 750 mOhm @ 2A, 10V Resistance Drain-source Rds (on): 0.68 Ohms Series: CoolMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3.5V @ 170?µA
-
Количество страниц17 шт.
-
Форматы файлаHTML, PDF
Где можно купить
Новости электроники
10.06.2024
09.06.2024
08.06.2024